CKKH-HV136/24
CKKH-HV136/24
CKKH-HV136/24

CKKH-HV136/24


Notes

  • Current ratings require assembly on a suitably engineered heatsink, using a quality heat coupling compound.
  • Data for all device parameters taken at 25˚C unless otherwise noted.
  • Additional devices available on special request. Contact the factory.
  • Storage Temperature (TSTG) -40˚C to 130˚C.
  • Operating Junction Temperature (TJ) -40˚C to 150˚C.

Series Data Sheet Series Data Sheet
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Specification

Specification

DESCRIPTION specification conditions VALUE
Maximum Repetitive Reverse Voltage VRRM2400 V
Maximum Forward Surge Current ITSMt = 10mS, Sinusodial Half Wave, TJ = TJMAX 3200 A
Maximum Forward Voltage Drop VTMITM = π x IT(AV), 180º Conduction, TJ = TJMAX, AV Power = VT(TO) x IT(AV) + rt x (IT(RMS))2 1.66 V
Critical Rate of Rise (Delta I / Delta T) ΔI/ΔT300 A/µS
Maximum RMS Output Current IT(RMS)213 A
Maximum I2t For Fusing I2Tt = 10mS, Sinusoidal Half Wave, Initial TJ = TJMAX 51.5 kA2S
Maximum Gate Trigger Voltage VGT3.0 V
Maximum Gate Trigger Current IGT200 mA
Maximum Critical Rate of Rise of Off-State Voltage ΔV/ΔTTJ = 125ºC, Exponential to 67%, Rated VDRM 1000 V/µS
Maximum Average Forward Current IT(AV)Half Sinewave, 180º Conduction, TC = 85ºC 130 A
Low Level Forward Threshold Voltage VT(TO)TJ = TJMAX0.98 V