• Current ratings require assembly on a suitably engineered heatsink, using a quality heat coupling compound.
  • Data for all device parameters taken at 25˚C unless otherwise noted.
  • Additional devices available on special request. Contact the factory.
  • Storage Temperature (TSTG) and Operating Junction Temperature (TJ) are -40˚C to +125˚C.


DESCRIPTION specification conditions VALUE
Maximum Repetitive Reverse VoltageVRRM1200 V
Maximum Forward Surge CurrentITSMAt TJMAX3360 A
Maximum Forward Voltage DropVTMAt On-State Current1.66 V
Maximum Case TemperatureTC85 °C
Critical Rate of Rise (Delta I / Delta T)ΔI/ΔT300 A/µS
Maximum RMS Output CurrentIT(RMS)300
Maximum I2t For FusingI2TAt 60Hz47
Low Level Forward Slope ResistanceRF1At TJMAX1.62 mΩ
Maximum Gate Trigger VoltageVGT3.0 V
Maximum Gate Trigger CurrentIGT200 mA
Maximum Critical Rate of Rise of Off-State VoltageΔV/ΔTAt TJMAX1000 V/µS
Maximum Average Forward CurrentIT(AV)At TC (Case Temperature)135 A
On-State CurrentITM425 A
Low Level Forward Threshold VoltageVT(TO)At TJMAX0.98 V
Maximum Thermal ResistanceQJ0.235 °C/W