CKKH260/36


Notes

  • Current ratings require assembly on a suitably engineered heatsink, using a quality heat coupling compound.
  • Data for all device parameters taken at 25˚C unless otherwise noted.
  • Additional devices available on special request. Contact the factory.
  • Storage Temperature (TSTG) and Operating Junction Temperature (TJ) are -40˚C to +125˚C.

Specification

DESCRIPTION specification conditions VALUE
Maximum Repetitive Reverse Voltage VRRM3600 V
Maximum Forward Surge Current ITSMt = 10mS, Sinusoidal Half Wave, Initial TJ = TJMAX 6000 kA
Maximum Forward Voltage Drop VTMIT = 630A, 25ºC 2.30 V
Critical Rate of Rise (Delta I / Delta T) ΔI/ΔT400 A/µS
Maximum RMS Output Current IT(RMS)405 A
Maximum I2t For Fusing I2Tt = 10mS, No Voltage Reapplied, Sinusoidal Half Wave, Initial TJ = TJMAX 180 A2S
Maximum Gate Trigger Voltage VGT2.5 V
Maximum Gate Trigger Current IGT250 mA
Maximum Critical Rate of Rise of Off-State Voltage ΔV/ΔTTJ = 125ºC, Exponential to 67%, Rated VDRM 1000 V/µS
Maximum Average Forward Current IT(AV)Half Sinewave, 180º Conduction, TC = 85ºC 260 A
Low Level Forward Threshold Voltage VT(TO)TJ = TJMAX1.40 V