CKKH650/10
Notes
- Current ratings require assembly on a suitably engineered heatsink, using a quality heat coupling compound.
- Data for all device parameters taken at 25˚C unless otherwise noted.
- Additional devices available on special request. Contact the factory.
- Storage Temperature (TSTG) and Operating Junction Temperature (TJ) are -40˚C to +125˚C.
Specification
DESCRIPTION | specification | conditions | VALUE |
---|---|---|---|
Maximum Repetitive Reverse Voltage | VRRM | 1000 V | |
Maximum Forward Surge Current | ITSM | At TJMAX | 23915 A |
Maximum Forward Voltage Drop | VTM | At On-State Current | 1.40 V |
Maximum Case Temperature | TC | 85 °C | |
Critical Rate of Rise (Delta I / Delta T) | ΔI/ΔT | 100 A/µS | |
Maximum RMS Output Current | IT(RMS) | 1020 | |
Maximum I2t For Fusing | I2T | At 60Hz | 1750 |
Low Level Forward Slope Resistance | RF1 | At TJMAX | 0.10 mΩ |
Maximum Gate Trigger Voltage | VGT | 2.5 V | |
Maximum Gate Trigger Current | IGT | 250 mA | |
Maximum Critical Rate of Rise of Off-State Voltage | ΔV/ΔT | At TJMAX | 500 V/µS |
Maximum Average Forward Current | IT(AV) | At TC (Case Temperature) | 650 A |
On-State Current | ITM | 1978 A | |
Low Level Forward Threshold Voltage | VT(TO) | At TJMAX | 0.85 V |
Maximum Thermal Resistance | QJ | 0.085 °C/W |