• Current ratings require assembly on a suitably engineered heatsink, using a quality heat coupling compound.
  • Data for all device parameters taken at 25˚C unless otherwise noted.
  • Additional devices available on special request. Contact the factory.
  • Storage Temperature (TSTG) and Operating Junction Temperature (TJ) are -40˚C to +125˚C.


DESCRIPTION specification conditions VALUE
Maximum Repetitive Reverse Voltage VRRM1000 V
Maximum Forward Surge Current ITSMAt TJMAX 26330 A
Maximum Forward Voltage Drop VTMAt On-State Current 1.45 V
Maximum Case Temperature TC85 °C
Critical Rate of Rise (Delta I / Delta T) ΔI/ΔT100 A/µS
Maximum RMS Output Current IT(RMS)1123
Maximum I2t For Fusing I2TAt 60Hz 2320
Low Level Forward Slope Resistance RF1At TJMAX 0.20 mΩ
Maximum Gate Trigger Voltage VGT2.5 V
Maximum Gate Trigger Current IGT250 mA
Maximum Critical Rate of Rise of Off-State Voltage ΔV/ΔTAt TJMAX 500 V/µS
Maximum Average Forward Current IT(AV)At TC (Case Temperature) 715 A
On-State Current ITM2512 A
Low Level Forward Threshold Voltage VT(TO)At TJMAX0.85 V
Maximum Thermal ResistanceQJ0.066 °C/W