Z660EH6

Specification Conditions Value
VRMS 660 V
VDC 850 V
VN(DC) MIN At 1 mA 940 V
VN(DC) NOM At 1 mA 1050 V
VN(DC) MAX At 1 mA 1160 V
WMAX At 2 ms 1250 J
VC At IC 1740 V
IC 200 A
IP For 8 x 20 μs Pulse 40000 A
C At 1 kHz 1980 pF
PD MAX 2 W
Op. Temp. 55 to 125 °C
Store Temp. 55 to 125 °C
  • Device data taken at 25 °C.
  • Typical response time is less than 15 nanoseconds.
RoHS